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The AST Cede-200 plasma-enhanced chemical deposition system, one that
can be upgraded to support 200mm wafer manufacturing, is compatible
to the advanced multiple reaction chamber PECVD process equipment,
and is design to support the applications of producing high quality,
high uniformity (<3%) and high density SiNx, SiO2 and SiC thin
film deposition, offering step coverage and gap filling required during
generation III-V Group Semiconductor fabrication
processes, including the applications of passivation, isolation
and dielectric insulation depositions, to emerge as a top choice for
fabricating optical and communications components of MMIC,
VCSEL, Blue Light LED, LD.
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The Cede-200, with many innovative technical
sophistication, serves to provide uniformed low stress and hole-free
thin film deposition for wafers measuring up to 200mm, utilizing
core technology deriving from AST's proprietary design of a
high-performance, high dependability plasma generation system,
designed utilizing precision reaction chamber intake/ventilation
airflow dynamics simulation to form an even parameter flow on
mater surfaces. This, together with an innovative multi heat
inductive even temperature controlled thin film deposition setting
and a proprietary process parameter control, i.e. the RF plasma
rate, reaction airflow, process pressure, secondary MF power
and plastic rinsing techniques, to allow the user to fully utilize
a wafer space, with extended operating cycle, zero thin film
defect and a minimal micro count to enhance wafer production
output and yield rate.
The Cede-200 model can also be configured with an AST cluster
tool platform to greatly enhance a Cede-200 equipment's wafer
output, device flexibility and efficiency, cut down labor cost
and defect of human error, and warrant the user with a lower
equipment purchasing cost, as well as subsequent operating and
maintenance costs. |
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|
Chamber Materials |
Anodized Al 6061T6 |
| RF Power |
300 ~ 1000 W (Option) |
|
Substrate Temperature Control |
RT
~ 400¢J |
| Wafer Numbers / Size |
(30 -1) pcs / (2"-
8") |
|
Gas Lines with MFCs |
6 Standard Lines |
| Reactor Base Pressure
|
< 1E-3 Torr |
|
Process Pressure Range |
From 50 mTorr to 10 Torr |
| Pumping System |
Roots pump + Rotary
pump or
Dry pump(Option) |
|
Load/Unload (Option) |
Vacuum Robot Transport |
| Load-Locks Pumping
System (Option) |
Rotary Vane Pump |
|
Load-Locks base Pressure (Option) |
< 1E-2 Torr |
| Non-Uniformity |
5% for WIW, WTW and
RTR |
|
Automatic Control System |
Industrial PC with Graphic Control Interface |
| Power Requirement
|
AC220V, 3 phase, 60
Hz, 80A, |
|
Gas Inlet Requirement |
1.2 kgw/cm2 |
| CDA Requirement |
5 kgw/cm2 |
|
Water Requirement |
1.5
kgw/cm2, 20¢J, 20 l/min |
| Dimension (WxDxH)
|
950 x 1100 x 1750
(mm) |
|
Weight |
450 kgw |
|
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